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CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor100 V / 900 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-100-900-K-CD4-C
Rated Voltage (Ur): 100 V
Category Voltage (Uc): 60 V
Surge Voltage (Us): 110 V
Capacitance (CR): 900 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CD4 / Size: 22 x 16 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor100 V / 900 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-100-900-K-CD4-BL
Rated Voltage (Ur): 100 V
Category Voltage (Uc): 60 V
Surge Voltage (Us): 110 V
Capacitance (CR): 900 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CD4 / Size: 22 x 16 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor100 V / 900 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-100-900-K-CD4-CL
Rated Voltage (Ur): 100 V
Category Voltage (Uc): 60 V
Surge Voltage (Us): 110 V
Capacitance (CR): 900 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CD4 / Size: 22 x 16 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor100 V / 900 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-100-900-K-CE1-A
Rated Voltage (Ur): 100 V
Category Voltage (Uc): 60 V
Surge Voltage (Us): 110 V
Capacitance (CR): 900 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE1 / Size: 36 x 8 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor100 V / 900 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-100-900-K-CE1-B
Rated Voltage (Ur): 100 V
Category Voltage (Uc): 60 V
Surge Voltage (Us): 110 V
Capacitance (CR): 900 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE1 / Size: 36 x 8 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
100 V / 900 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-100-900-K-CE1-C
Rated Voltage (Ur): 100 V
Category Voltage (Uc): 60 V
Surge Voltage (Us): 110 V
Capacitance (CR): 900 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE1 / Size: 36 x 8 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
100 V / 900 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-100-900-K-CE1-BL
Rated Voltage (Ur): 100 V
Category Voltage (Uc): 60 V
Surge Voltage (Us): 110 V
Capacitance (CR): 900 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE1 / Size: 36 x 8 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
100 V / 900 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-100-900-K-CE1-CL
Rated Voltage (Ur): 100 V
Category Voltage (Uc): 60 V
Surge Voltage (Us): 110 V
Capacitance (CR): 900 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE1 / Size: 36 x 8 -
CAK36F Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor100 V / 900 uF CAK36F Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36F-100-900-K-FE1-E
Rated Voltage (Ur): 100 V
Category Voltage (Uc): 60 V
Surge Voltage (Us): 110 V
Capacitance (CR): 900 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: FE1 / Size: 36 x 8 -
Biconical Antenna, RF Antenna1000 MHz to 6000 MHz, N Female, EMC Biconical Antenna-RFecho
Frequency: 1000MHz-6000MHz
Gain: 1 to 41dBi
VSWR: 2.0:1
Power Handling:20W
Balun Type Transform Ratio: 1:1
Low Return Loss
Equipped with an N-connector
OBC-1060-20W-1 Biconical Antenna can be used in wireless communication,radar systems and EMI testing. -
MOSFETs & Power Transistors100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
100V N-CHANNEL MOSFET
Low gate charge
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
100V N-Channel MOSFET
Low gate charge
Super Junction MOS
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
100V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 31nC (Typ.).
BVDSS=100V,ID= 30A
RDS(on) : 0.07mOhm (Max) @VG=10V
100% Avalanche Tested -
MOSFETs & Power Transistors
100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!