|Image||SKU||Input return loss (dB)||Max. Frequency (GHz)||Min. Frequency (GHz)||Output power (dBm)||Output return loss (dB)||Saturated Output Power (dBm)||Saturation Output Power (dBm)||Small Signal Gain (dB)||Price||Buy|
5G, GaN, GaN Monolithic Integrated Driver Amplifier
GaN Monolithic Integrated Driver Amplifier O562
The O562 is a GaN monolithic integrated driver amplifier operating at 5.0-6.0 GHz delivering 21dB of power gain and 29dBm of saturated output power at + 28V operating voltage.
The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.SKU: O562