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CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor300 V / 5000 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-300-5000-K-D4
Rated Voltage (Ur): 300 V
Capacitance (CR): 5000 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: D4
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
300 V / 5000 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-300-5000-M-D4
Rated Voltage (Ur): 300 V
Capacitance (CR): 5000 uF
Capacitance Tolerance: +/-20% (Code M)
Case Code: D4
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor300 V / 630 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-300-630-K-B1
Rated Voltage (Ur): 300 V
Capacitance (CR): 630 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: B1
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
300 V / 630 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-300-630-M-B1
Rated Voltage (Ur): 300 V
Capacitance (CR): 630 uF
Capacitance Tolerance: +/-20% (Code M)
Case Code: B1
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
MOSFETs & Power Transistors30V N-Channel MOSFET
30V, 160A
RDS(ON) Typ = 1.4mmOhm @ VGS = 10V
RDS(ON) Typ = 2.3mmOhm @ VGS = 4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
Applications: Load Switch, PWM… -
MOSFETs & Power Transistors
30V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 17.5nC (Typ.).
VDSS=30V,ID=20A
RDS(on) : 0.016mOhm (Max) @VG=10V
100% Avalanche Tested -
MOSFETs & Power Transistors
30V N-Channel MOSFET
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
30V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 17.5nC (Typ.).
BVDSS=30V, ID=30A
RDS(on) : 0.014 mOhm (Max) @VG=10V
100% Avalanche Tested -
Integrated Circuits (ICs)32–38 GHz Four-Channel Beamforming IC – MH311W
Frequency range: 32 to 38 GHzTX linear gain: 26 dB typ.TX saturated output power: 21 dBm typ.RX linear gain: 23 dB typ.RX noise figure: 5.5 dB typ.Supply voltage: 3.3 V,…
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Integrated Circuits (ICs)32–38 GHz Four-Channel Beamforming IC – MH322W
Frequency range: 32 to 38 GHzTX linear gain: 25 dB typ.TX saturated output power: 24 dBm typ.RX linear gain: 22 dB typ.RX noise figure: 4.1 dB typ.Supply voltage: 3.3 V6-bit…
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Integrated Circuits (ICs)32–38 GHz Four-Channel Beamforming IC – MH326
Frequency range: 32 to 38 GHzTX linear gain: 29 dB typ.TX saturated output power: 22.5 dBm typ.RX linear gain: 26 dB typ.RX noise figure: 3 dB typ.Supply voltage: 3.3 V6-bit…
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Integrated Circuits (ICs)32–38 GHz Four-Channel Beamforming IC – MH351
Frequency range: 32 to 38 GHzTX linear gain: 8 dB typ.RX linear gain: 1 to 5 dBRX noise figure: 12 dB max.Supply voltage: 5 V, −5 V6-bit phase control; 5.625°…
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Integrated Circuits (ICs)32–38 GHz Four-Channel Beamforming IC – MH3512W
Frequency range: 32 to 38 GHzTX linear gain: 28 dB typ.TX saturated output power: 26 dBm typ.RX linear gain: 15 dB typ.RX noise figure: 3.5 dB typ.Supply voltage: 5 V,…
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Integrated Circuits (ICs)33–37 GHz Transceiver Front-End IC – MH305W
RX frequency range: 33 to 37 GHzRX gain: 10 dB typ.RX noise figure: 8.5 dB typ.IF frequency range: 0.1 to 100 MHzTX frequency range: 33 to 37 GHzSupply voltage: 1.1…
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Integrated Circuits (ICs)34–37 GHz Transceiver Front-End IC – MH3052W
RX frequency range: 34 to 37 GHzRX gain: 9 dB typ.RX noise figure: 8.5 dB typ.IF frequency range: 0.1 to 100 MHzTX frequency range: 34 to 37 GHzSupply voltage: 1.1…
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CAK36S Square High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor35 V / 10000 uF CAK36S Square High-Energy Composite Tantalum Capacitor
CAK36S-35-10000-K-SE1-F
Rated Voltage (Ur): 35 V
Capacitance (CR): 10000 uF
Case Code: SE1