GaAs Monolithic Integrated Power Amplifier O210

GaAs Monolithic Integrated Power Amplifier O210

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The O210 is a GaAs monolithic integrated power amplifier chip operating at 6.8-9.0 GHz delivering 23dB of power gain and 33dBm of saturated output power with 100us pulse width, 10% duty cycle and + 6V operation. The power added efficiency 33%.

The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.

Description

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Additional information

Min. Frequency (GHz)

6.8

Max. Frequency (GHz)

9

Saturated Output Power (dBm)

Power Added Efficiency (%)

Power Gain (dB)

Small Signal Gain (dB)

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