GaAs Monolithic Integrated Power Amplifier O210

GaAs Monolithic Integrated Power Amplifier O210

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The O210 is a GaAs monolithic integrated power amplifier chip operating at 6.8-9.0 GHz delivering 23dB of power gain and 33dBm of saturated output power with 100us pulse width, 10% duty cycle and + 6V operation. The power added efficiency 33%.

The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.



Additional information

Min. Frequency (GHz)


Max. Frequency (GHz)


Saturated Output Power (dBm)

Power Added Efficiency (%)

Power Gain (dB)

Small Signal Gain (dB)

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