GaAs Monolithic Integrated Power Amplifier O214

GaAs Monolithic Integrated Power Amplifier O214

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The O214 is a GaAs monolithic integrated power amplifier IC operating from 11 to 17 GHz delivering 19dB of power gain and 28dBm of saturated output power at + 8V operating voltage.

The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.



Additional information

Min. Frequency (GHz)


Max. Frequency (GHz)


Saturated Output Power (dBm)

Power Added Efficiency (%)

Power Gain (dB)

Small Signal Gain (dB)

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