GaAs Monolithic Integrated Power Amplifier O214

GaAs Monolithic Integrated Power Amplifier O214

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The O214 is a GaAs monolithic integrated power amplifier IC operating from 11 to 17 GHz delivering 19dB of power gain and 28dBm of saturated output power at + 8V operating voltage.

The power amplifier chip using on-chip through-hole metallization process to ensure a good grounding, no additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.

Description

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Additional information

Min. Frequency (GHz)

11

Max. Frequency (GHz)

17

Saturated Output Power (dBm)

Power Added Efficiency (%)

Power Gain (dB)

Small Signal Gain (dB)

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