GaAs Monolithic Integrated Power Amplifier O222

GaAs Monolithic Integrated Power Amplifier O222

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The O222 is a GaAs monolithic integrated power amplifier chip operating at 8.0-12.0GHz delivering 21dB of power gain and 29dBm of saturated output power at + 8V operating power with an additional power efficiency of 30%.

The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.

Description

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Additional information

Min. Frequency (GHz)

8

Max. Frequency (GHz)

12

Saturated Output Power (dBm)

Power Added Efficiency (%)

Power Gain (dB)

Small Signal Gain (dB)

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