GaAs Monolithic Integrated Power Amplifier O234

GaAs Monolithic Integrated Power Amplifier O234

The O234 is a gallium arsenide PHEMT monolithic integrated power amplifier chip operating at
2.7-3.5GHz. It offers 24dB power gain and 41dBm saturated output power with a pulse width of 100us, duty cycle of 10% and operating voltage of + 8.5V , Power added efficiency 33%.

The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.

SKU: O234 Categories: Amplifier, Power Amplifier, Uncategorized

Description

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Additional information

Min. Frequency (GHz)

2.7

Max. Frequency (GHz)

3.5

Saturated Output Power (dBm)

41

Power Added Efficiency (%)

35

Power Gain (dB)

24

Small Signal Gain (dB)

27

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