GaAs Monolithic Integrated Power Amplifier O234

GaAs Monolithic Integrated Power Amplifier O234

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The O234 is a gallium arsenide PHEMT monolithic integrated power amplifier chip operating at
2.7-3.5GHz. It offers 24dB power gain and 41dBm saturated output power with a pulse width of 100us, duty cycle of 10% and operating voltage of + 8.5V , Power added efficiency 33%.

The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering process.



Additional information

Min. Frequency (GHz)


Max. Frequency (GHz)


Saturated Output Power (dBm)

Power Added Efficiency (%)

Power Gain (dB)

Small Signal Gain (dB)

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