GaAs Monolithic Integrated Power Amplifier O239

GaAs Monolithic Integrated Power Amplifier O239

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The O239 is a gallium arsenide PHEMT power amplifier chip operating at 1.0 ~ 1.4GHz, providing 25dB power gain and 28dBm saturated output power at + 5V working voltage
48% power added efficiency.

The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.

Description

PDF

Additional information

Min. Frequency (GHz)

1

Max. Frequency (GHz)

1.4

Saturated Output Power (dBm)

Power Added Efficiency (%)

Power Gain (dB)

Small Signal Gain (dB)

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