GaAs Monolithic Integrated Power Amplifier O239

GaAs Monolithic Integrated Power Amplifier O239

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The O239 is a gallium arsenide PHEMT power amplifier chip operating at 1.0 ~ 1.4GHz, providing 25dB power gain and 28dBm saturated output power at + 5V working voltage
48% power added efficiency.

The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.

SKU: O239 Categories: Amplifier, Power Amplifier, Uncategorized

Description

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Additional information

Min. Frequency (GHz)

1

Max. Frequency (GHz)

1.4

Saturated Output Power (dBm)

28

Power Added Efficiency (%)

NA

Power Gain (dB)

25

Small Signal Gain (dB)

29

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