GaAs Monolithic Integrated Switch O111

GaAs Monolithic Integrated Switch O111

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O111 is an absorption type gallium arsenide pHEMT single pole double throw switch chip, the working frequency covers DC ~ 6GHz. The switching chip can provide less than 1.5dB insertion loss and greater than 60dB isolation across the operating requency band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often Suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use.The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

Additional information

Min. Frequency (GHz)

DC

Max. Frequency (GHz)

6

Isolation (dB)

Insertion Loss (dB)

Input P-0.1 (dB)

Return Loss RFC(ON)

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