GaAs Monolithic Integrated Switch O112

GaAs Monolithic Integrated Switch O112

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O112 is a reflective gallium arsenide pHEMT single-pole, double-throw switch chip with an operating frequency of DC to 6 GHz. The switching chip can provide less than 1.1dB insertion loss and greater than 50dB isolation across the operating band. Use 0/-5V logic control, no external power supply bias, no power consumption. It is often
suitable for microwave hybrid integrated circuits and multi-chip modules as well as low-power systems.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

Additional information

Min. Frequency (GHz)

DC

Max. Frequency (GHz)

6

Isolation (dB)

Insertion Loss (dB)

Input P-0.1 (dB)

Return Loss RFC(ON)

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