GaN Monolithic Integrated Driver Amplifier O570

GaN Monolithic Integrated Driver Amplifier O570

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The O570 is a GaN monolithic integrated driver amplifier chip operating at 8.0-12.0GHz delivering 16dB of power gain and 24dBm of saturated output power at + 28V operating voltage.

The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.

Description

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Additional information

Min. Frequency (GHz)

8.0

Max. Frequency (GHz)

12.0

Saturated Output Power (dBm)

Small Signal Gain (dB)

Power Gain (dB)

Input return loss (dB)

Output return loss (dB)

Output power (dBm)

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