GaN Monolithic Integrated Driver Amplifier O579

GaN Monolithic Integrated Driver Amplifier O579

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The O579 is a GaN monolithically integrated driver amplifier chip operating at 1.2 to 1.6 GHz delivering 23dB of power gain and 26.5dBm of saturated output power at + 28V operating voltage.

The chip uses on-chip through-hole metallization process to ensure a good grounding, do not need additional grounding measures, easy to use. The back of the chip was metallized, suitable for eutectic sintering or conductive adhesive bonding process.

SKU: O579 Categories: Amplifier, Driver Amplifier, Uncategorized

Description

PDF

Additional information

Min. Frequency (GHz)

1.2

Max. Frequency (GHz)

1.6

Saturated Output Power (dBm)

26.5

Small Signal Gain (dB)

30.0

Power Gain (dB)

23.0

Input return loss (dB)

10.0

Output return loss (dB)

10.0

Output power (dBm)

26.5

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