GaN Monolithic Integrated Power Amplifier O1193

GaN Monolithic Integrated Power Amplifier O1193

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The O1193 is a 2.7-3.5GHz GaN monolithic integrated power amplifier chip. It provides 24dB power gain and 40dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 40%.

The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.

Description

PDF

Additional information

Min. Frequency (GHz)

2.7

Max. Frequency (GHz)

3.5

Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

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