GaN Monolithic Integrated Power Amplifier O1196

GaN Monolithic Integrated Power Amplifier O1196

0 out of 5

The O1196 is a GaN monolithic integrated power amplifier chip operating at 7.0-9.0 GHz. With a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage, it provides 21dB power gain and 41dBm saturated output power.
Power-added efficiency 44%.

The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.

Description

PDF

Additional information

Min. Frequency (GHz)

7

Max. Frequency (GHz)

9

Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

You've just added this product to the cart: