GaN Monolithic Integrated Power Amplifier O1198

GaN Monolithic Integrated Power Amplifier O1198

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The O1198 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.0GHz. It provides 20.5dB power gain and 40.5dBm saturated output power at continuous wave and +28V operating voltage, and the
power-added efficiency is 47%.

The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.

Description

PDF

Additional information

Min. Frequency (GHz)

5

Max. Frequency (GHz)

6

Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

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