GaN Monolithic Integrated Power Amplifier O248

GaN Monolithic Integrated Power Amplifier O248

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The O248 is a GaN monolithic integrated power amplifier chip operating at 19-21GHz. It provides 15dB power gain and 40dBm saturated output power at a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power added efficiency is 29. %.

The power amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and is suitable for eutectic sintering processes.

Description

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Additional information

Min. Frequency (GHz)

19

Max. Frequency (GHz)

21

Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

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