GaN Monolithic Integrated Power Amplifier O251

GaN Monolithic Integrated Power Amplifier O251

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The O251 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.5GHz. It provides 22dB power gain and 36dBm saturated output power at a continuous wave, +28V operating voltage, and a power-added efficiency of 48%.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.



Additional information

Min. Frequency (GHz)


Max. Frequency (GHz)


Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

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