GaN Monolithic Integrated Power Amplifier O251

GaN Monolithic Integrated Power Amplifier O251

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The O251 is a GaN monolithic integrated power amplifier chip operating at 5.0-6.5GHz. It provides 22dB power gain and 36dBm saturated output power at a continuous wave, +28V operating voltage, and a power-added efficiency of 48%.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.

Description

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Additional information

Min. Frequency (GHz)

5

Max. Frequency (GHz)

6.5

Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

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