GaN Monolithic Integrated Power Amplifier O252

GaN Monolithic Integrated Power Amplifier O252

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The O252 is a GaN monolithic integrated power amplifier chip working on 4.4-6.0GHz. It provides 22dB power gain and 43dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 48%.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.



Additional information

Min. Frequency (GHz)


Max. Frequency (GHz)


Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

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