GaN Monolithic Integrated Power Amplifier O252

GaN Monolithic Integrated Power Amplifier O252

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The O252 is a GaN monolithic integrated power amplifier chip working on 4.4-6.0GHz. It provides 22dB power gain and 43dBm saturated output power with pulse width of 100us, duty cycle of 10%, and +28V operating voltage. Power-added efficiency 48%.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.

Description

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Additional information

Min. Frequency (GHz)

4.4

Max. Frequency (GHz)

6

Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

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