GaN Monolithic Integrated Power Amplifier O253
The O253 is a GaN monolithic integrated power amplifier chip working at 8.0-12GHz. It provides 21dB power gain and 43dBm saturated output power with a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power-added efficiency is 40. %.
The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.