GaN Monolithic Integrated Power Amplifier O253

GaN Monolithic Integrated Power Amplifier O253

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The O253 is a GaN monolithic integrated power amplifier chip working at 8.0-12GHz. It provides 21dB power gain and 43dBm saturated output power with a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power-added efficiency is 40. %.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.

Description

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Additional information

Min. Frequency (GHz)

8

Max. Frequency (GHz)

12

Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

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