GaN Monolithic Integrated Power Amplifier O253

GaN Monolithic Integrated Power Amplifier O253

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The O253 is a GaN monolithic integrated power amplifier chip working at 8.0-12GHz. It provides 21dB power gain and 43dBm saturated output power with a pulse width of 100us, a duty cycle of 10%, and a +28V operating voltage. The power-added efficiency is 40. %.

The chip uses on-chip via metallization process to ensure a good grounding, no additional grounding measures, easy to use. The backside of the chip is metallized and is suitable for eutectic sintering processes.



Additional information

Min. Frequency (GHz)


Max. Frequency (GHz)


Small Signal Gain (dB)

Power Gain (dB)

Output power (dBm)

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