Integrated Power Amplifier O259SM7H

Integrated Power Amplifier O259SM7H

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The O259SM7H is a GaN integrated power amplifier operating at 2.7~3.5GHz. With a +28V operating voltage, 21dB power gain, 41dBm saturated output power and 48% power efficiency can be provided.

The amplifier adopts 7x7mm surface-mount non-leaded ceramic package, which can realize gas-tight encapsulation. The surface of the pin pad is processed by gold plating and is suitable for reflow soldering installation process.

SKU: O259SM7H Categories: ,

Description

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Additional information

Min.Frequency band (GHz)

Max.Frequency band (GHz)

Gain (dB)

Input return loss

Output return loss

Output P-1

Saturation Output Power (dBm)

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