Monolithic Integrated (Dual) Bidirectional Amplifier O559

Monolithic Integrated (Dual) Bidirectional Amplifier O559

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The O559 is a GaAs monolithic integrated bi-directional amplifier chip operating from 8.0-12.0GHz. It operates from a single +5V supply and provides 26dB of gain and 16dBm of P1dB of output power at 110mA.

The bi-directional amplifier chip adopts an on-chip via hole metallization process to ensure good grounding, no additional grounding measures are needed, and the use is simple and convenient. The backside of the chip is metallized and suitable for eutectic sintering or conductive adhesive bonding processes.

Description

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Additional information

Min. Frequency (GHz)

8.0

Max. Frequency (GHz)

12.0

Noise Figure (dB)

4.0

Gain (dB)

26.0

P1dB Output Power (dBm)

16.0

Saturation Output Power (dBm)

17.0

Output IP3 (dBm)

24.0

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