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CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor500 V / 270 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-500-270-M-C1
Rated Voltage (Ur): 500 V
Capacitance (CR): 270 uF
Capacitance Tolerance: +/-20% (Code M)
Case Code: C1
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
500 V / 550 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-500-550-K-C2
Rated Voltage (Ur): 500 V
Capacitance (CR): 550 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: C2
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
500 V / 550 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-500-550-M-C2
Rated Voltage (Ur): 500 V
Capacitance (CR): 550 uF
Capacitance Tolerance: +/-20% (Code M)
Case Code: C2
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
500 V / 820 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-500-820-K-C3
Rated Voltage (Ur): 500 V
Capacitance (CR): 820 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: C3
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
500 V / 820 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-500-820-M-C3
Rated Voltage (Ur): 500 V
Capacitance (CR): 820 uF
Capacitance Tolerance: +/-20% (Code M)
Case Code: C3
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
MOSFETs & Power Transistors500V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=5nC (Typ.).
BVDSS=500V,ID=1A
RDS(on) : 30 mOhm (Max) @VG=10V
100% Avalanche Tested -
Wi-Fi 6 Modules573.5Mbps SDIO Wi-Fi 6 Module N240B-SRX
Main chipset: AIC8800D40X2
Wi-Fi standard: 802.11a/b/g/n/ac/ax
Interface (Wi-Fi/BT): SDIO
Throughput: 573.5Mbps
Dimension: 13.0 × 15.0 mm
Compact surface-mount module for embedded integration
573.5Mbps Wi-Fi 6 module N240B-SRX supports Wi-Fi 6 connectivity for IoT, smart home and… -
Integrated Circuits (ICs)58–62 GHz Transceiver Front-End IC – MH610W
RX frequency range: 58 / 60 / 62 GHz (min. / typ. / max.)RX gain: 12 dB typ.RX noise figure: 8.5 dB typ.IF frequency range: 0.1 to 100 MHzTX frequency…
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Rectifiers & Diodes
6.0 A Single-Phase Bridge Rectifier
Ideal for P.C. Board mounting
High surge current capability
This series is UL listed under the Recognized Component Index, file number E142814
The plastic material used carries Underwriters Laboratory flammability recognition 94V-0
High temperature… -
Wi-Fi 6 Modules600.4Mbps USB2.0 Wi-Fi 6 Module N280E-U
Main chipset: AIC8800D80
Wi-Fi standard: Dual-band a/b/g/n/ac/ax
Interface (Wi-Fi/BT): USB2.0
Throughput: 600.4Mbps
Dimension: 12.2 × 12.9 mm
Compact surface-mount module for embedded integration
600.4Mbps Wi-Fi 6 module N280E-U supports Wi-Fi 6 connectivity for IoT, smart home… -
Wi-Fi 6 Modules600Mbps SDIO3.0/Uart Wi-Fi 6 Module N280A-SRL
Wi-Fi standard: Dual-band a/b/g/n/ac/ax
Interface (Wi-Fi/BT): SDIO3.0/Uart
Throughput: 600Mbps
Dimension: 12.0 × 12.0 mm
Compact surface-mount module for embedded integration
600Mbps Wi-Fi 6 module N280A-SRL supports Wi-Fi 6 connectivity for IoT, smart home and embedded… -
MOSFETs & Power Transistors
600V N-Channel MOSFET
Low gate charge
Low Crss (typical 2.55 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Halogen free and RoHS compliant -
Bipolar Transistors
60V N-Channel Enhancement Mode
VDS = 60V, ID = 0.3A
RDS(ON) < 4mOhm @ VGS=5V
RDS(ON) < 3mOhm @ VGS=10V
ESD Rating: HBM 2000V
High power and current handing capability
Lead free product is acquired
Surface mount package
Direct logic-level interface:… -
Bipolar Transistors
60V N-Channel MOSFET
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc
ESD Protected… -
MOSFETs & Power Transistors
60V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 50nC (Typ.).
BVDSS=60V,ID=50A
RDS(on) : 0.02mOhm (Max) @VG=10V
100% Avalanche Tested -
MOSFETs & Power Transistors
60V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 50nC (Typ.).BVDSS=60V,ID=50A
RDS(on) : 0.02mOhm (Max) @VG=10V
100% Avalanche Tested