-
Rectifiers & DiodesOGBP410
Surge overload rating 125 amperes peak
Ideal for printed circuit board
Plastic material has underwriters laboratory flammability classification 94V-0 -
Rectifiers & Diodes
OGBU2010
UL recognition, file #E230084
Ideal for printed circuit boards
High surge current capability
Solder dip 275 °C max. 7 s, per JESD 22-B106
Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
Tin plated leads,… -
Rectifiers & Diodes
OGBU3510
Glass passivated chip
Low forward voltage drop
Ideal for printed circuit board
High surge current capability -
Rectifiers & Diodes
OGBU4005 thru GBU410
Ideal for P.C. Board mounting
High surge current capability
The plastic material used carries Underwriters Laboratory flammability recognition 94V-0
High temperature soldering guaranteed 265 C / 10 seconds at 5 lbs (2.3kg) tension -
Rectifiers & Diodes
OGLASS PASSIVATED BRIDGE
surage overload rating -60 amperes peak
Ideal for printed circuit board
Plastic material has Underwriters Laboratory flammability classification 94V-0
Mounting position: Any
weight: 0.07ounces, 1.65grams -
MOSFETs & Power Transistors
OGS100N04 N-Channel Enhancement
VDS =40V, ID =100A
RDS(ON) 0.9mmOhm @ VGS=10V
RDS(ON) 1.3 mmOhm @ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package… -
-
MOSFETs & Power Transistors
OGS100N10F 100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
OGS100N10R 100V N -Channel MOSFET
N-Channel: 100V 100A
RDS(on)Typ = 6.2m°&@VGS = 10 V
RDS(on)Typ = 8.6m°&@VGS = 4.5V
Very Low On-resistance RDS(ON)
Low Crss
Fast switching
100% avalanche tested
Improved dv/dt capability -
MOSFETs & Power Transistors
OGS100N15D150V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 75nC (Typ.).
BVDSS=150V,ID=100A
RDS(on) : 13mmOhm (Max) @VG=10V
100% Avalanche Tested -
MOSFETs & Power Transistors
OGS100N15F 150V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
Load Switch
PWM Application
Power Management -
MOSFETs & Power Transistors
OGS10N030 30V N-Channel MOSFET
30V, 10A
RDS(ON) < 8.5mmOhm @ VGS = 10V
RDS(ON) < 14mmOhm @ VGS = 4.5V
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
OGS10N04 N-Channel Enhancement Mode
VDS =40V,ID =100A
RDS(ON) 0.9mmOhm @ VGS=10V
RDS(ON) 1.3 mmOhm @ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for… -
MOSFETs & Power Transistors
OGS110N10F 100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
OGS110N20W 200V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
DC/DC Converter application
Ideal for high-frequency switching and synchronous rectification -
MOSFETs & Power Transistors
OGS120N85C 120V N-Channel
High Voltage: BVDSS=85V( Min.)
Low Crss : Crss=24.4pF(Typ.)
Low gate charge : Qg=55.7nC(Typ.)