MOSFETs & Power Transistors

RDS(ON) < 8.5 mmOhm @ VGS=10V, ID=15A
Low capacitance
Low gate charge
Fast switching capability
Avalanche energy specified

30V, 40A
RDS(ON) < 8.5mmOhm @ VGS = 10V
RDS(ON) < 14mmOhm @ VGS = 4.5V
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired OGS N-channel Enhancement Mode…

Extremely Low RDS(on): Typ.RDS(on) = 7.0m°) @VGS=10 V,Id=40 A
Low gate charge ( typical 75 nC)
Fast switching
100% avalanche tested

VDS =30V,ID =60A
RDS(ON)=4.0mmOhm (typical) @ VGS=10V
RDS(ON)=5.8mmOhm (typical) @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
ESD protection : HBM Class 2

Fast Switching
High avalanche Current
Low on Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% °”VDS Test