MOSFETs & Power Transistors

Low gate charge
Super Junction MOS
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product

VDS= -40V, ID= -5A
RDS(ON) < 88m°) @ VGS = -10V
RDS(ON) < 117m°) @ VGS = -4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead Free

N-Channel:30V 100A
RDS(on)Typ = 3.5mmOhm@VGS = 10 V
RDS(on)Typ = 5.2mmOhm@VGS = 4.5 V
Very Low On-resistance RDS(ON)
LowCrss
Fast switching
100% avalanche tested
Improved dv/dt capability

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 75nC (Typ.).
BVDSS=40V,ID=100A
RDS(on) : 2.4 mmOhm (Typ) @VG=10V
100% Avalanche Tested OTS100N04R is an N-channel power MOSFET designed for high-efficiency switching…

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 12.5nC (Typ.).
BVDSS=100V,ID= 10A
RDS(on) : 0.14°) (Max) @VG=10V
100% Avalanche Tested

N-Channel:30V 120A
RDS(on)Typ = 2.6mmOhm@VGS = 10 V
RDS(on)Typ = 3.6mmOhm@VGS = 4.5 V
Very Low On-resistance RDS(ON)
Low Crss
Fast switching
100% avalanche tested
Improved dv/dt capability