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MOSFETs & Power TransistorsOTS120N04R 40V N-Channel MOSFET
$0Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 75nC (Typ.).
BVDSS=40V,ID=120A
RDS(on) : 2.3mmOhm (Typ ) @VG=10V
100% Avalanche Tested -
MOSFETs & Power Transistors
OTS120N10
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MOSFETs & Power Transistors
OTS12N10R N-CHANNEL MOSFET
$0VDS =100V, ID =12A
RDS(ON) < 140mmOhm @ VGS=4.5V (Typ:100mmOhm)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good… -
MOSFETs & Power Transistors
OTS150N03R 30V N-Channel MOSFET
$0Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 56.9 nC (Typ.).
VDSS= 30V, ID= 150A
RDS(on) : 3.0 mmOhm (Max) @VG=10V
100% Avalanche Tested -
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MOSFETs & Power Transistors
OTS15N10R N-CHANNEL MOSFET
$0Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 12.5nC (Typ.).
BVDSS=100V,ID= 15A
RDS(on) : 0.14mOhm (Max) @VG=10V
100% Avalanche Tested -
MOSFETs & Power Transistors
OTS2300 20V N-Channel MOSFET
$0Low Intrinsic Capacitances
Excellent Switching Characteristics
Extended Safe Operating Area
Ultra Low Gate Charge: Qg=6nC (Typ.)
VDSS=20V, ID=6A
Rds(on): 24mmOhm(Typ.) @VG=4.5V
100% Avalanche Tested -
MOSFETs & Power Transistors
OTS2301 20V P-Channel MOSFET
$0Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 3.3nC (Typ.).
VDSS=-20V,ID=-3A
RDS(on) : 110m mOhm (Max) @VG=-4.5V
100% Avalanche Tested -
MOSFETs & Power Transistors
OTS2302 20V N-Channel MOSFET
$0Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 10nC (Typ.).
VDS=20V,ID=4.0A
RDS(on) : 50 mmOhm (Max) @VGS=2.5V
100% Avalanche Tested -
MOSFETs & Power Transistors
OTS2310 60V N-Channel MOSFET
$0Advanced Trench Technology
Excellent Switching Characteristics
Extended Safe Operating Area
Ultra Low Gate Charge:Qg=9nC (Typ.)
VDSS=60V, ID=3A
Rds(on): 75mmOhm (Typ.) @VG=10V
100% Avalanche Tested -
MOSFETs & Power Transistors
OTS25P06 60V P-Channel MOSFET
$0Improved dv/dt Capability, High Ruggedness
Maximum Junction Temperature Range (150°C)
DC Fan
Brushless motor
Optimized for Power Management Applications for Portable Products
Suitable for H-bridge, Inverters, Car Charger and Others -
MOSFETs & Power Transistors
OTS30N06R
$0Low gate charge
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
OTS30N10R 100V N-Channel MOSFET
$0Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 31nC (Typ.).
BVDSS=100V,ID= 30A
RDS(on) : 0.07mOhm (Max) @VG=10V
100% Avalanche Tested -
MOSFETs & Power Transistors
OTS3401 P-CHANNEL MOSFET
$0Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 6.4nC (Typ.).
BVDSS= -30V,ID= -4A
RDS(on) : 75mmOhm (Max) @VG=-4.5V
100% Avalanche Tested -
MOSFETs & Power Transistors
OTS3407 30V P-Channel MOSFET
$0Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 10nC (Typ.).
BVDSS=-30V,ID=-4.1A
RDS(on) : 65mmOhm (Max) @VG=-10V
100% Avalanche Tested