MOSFETs & Power Transistors

VDS =40V, ID =100A
RDS(ON) 0.9mmOhm @ VGS=10V
RDS(ON) 1.3 mmOhm @ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package…

N-Channel: 100V 100A
RDS(on)Typ = 6.2m°&@VGS = 10 V
RDS(on)Typ = 8.6m°&@VGS = 4.5V
Very Low On-resistance RDS(ON)
Low Crss
Fast switching
100% avalanche tested
Improved dv/dt capability

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 75nC (Typ.).
BVDSS=150V,ID=100A
RDS(on) : 13mmOhm (Max) @VG=10V
100% Avalanche Tested

VDS =40V,ID =100A
RDS(ON) 0.9mmOhm @ VGS=10V
RDS(ON) 1.3 mmOhm @ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for…

Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!

Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!

Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product