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MOSFETs & Power TransistorsOGS10N04 N-Channel Enhancement Mode
VDS =40V,ID =100A
RDS(ON) 0.9mmOhm @ VGS=10V
RDS(ON) 1.3 mmOhm @ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for… -
MOSFETs & Power Transistors
OGS110N10F 100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
OGS110N20W 200V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
DC/DC Converter application
Ideal for high-frequency switching and synchronous rectification -
MOSFETs & Power Transistors
OGS120N85C 120V N-Channel
High Voltage: BVDSS=85V( Min.)
Low Crss : Crss=24.4pF(Typ.)
Low gate charge : Qg=55.7nC(Typ.) -
MOSFETs & Power Transistors
OGS125N10 100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
OGS130N04 N-CHANNEL MOSFET
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
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MOSFETs & Power Transistors
OGS140N10 N-CHANNEL MOSFET
Low gate charge
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
OGS140N10F 100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
OGS150N04F 40V N-Channel MOSFET
40V, 150A
RDS(ON) Typ = 1.5m°) @ VGS = 10V
RDS(ON) Typ = 2m°) @ VGS = 4.5V
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
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MOSFETs & Power Transistors
OGS15N03P 30V N-Channel MOSFET
30V, 15A
RDS(ON)<8mmOhm @ VGS =10V
RDS(ON)<14mmOhm @ VGS =4.5V
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
100% UIS
100% °”Vds -
MOSFETs & Power Transistors
OGS175N10 N-MOSFET 100V, 2.8m©, 175A
Uses advanced SGT MOS technology
Extremely low on-resistance RDS(on)
Excellent QgxRDS(on) product (FOM)
Qualified according tOJEDEC criteria
100% Avalanche Tested -
MOSFETs & Power Transistors
OGS175N10F 100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
Load Switch Application
PWM Application
Power Management -
MOSFETs & Power Transistors
OGS180N03 N-CHANNEL MOSFET
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -