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MOSFETs & Power TransistorsOGS200N06 60V N-Channel MOSFET
Low gate charge
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
OGS200N085 N-CHANNEL MOSFET
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
OGS20N030 30V N-Channel MOSFET
30V, 20A
RDS(ON) < 13mmOhm @ VGS = 10V
RDS(ON) < 17mmOhm @ VGS = 4.5V
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% °”Vds TESTED!… -
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MOSFETs & Power Transistors
OGS250N04F 40V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
OGS250N04L 40V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
OGS280N10L 100V N-CHANNEL MOSFET
Low gate charge
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
OGS3080 30V N-channel MOSFET
Extremely Low RDS(on): 3.8m mOhm @VGS=10 V, Id=40 A
Good stability and uniformity
100% avalanche tested
Excellent package for good heat dissipation -
MOSFETs & Power Transistors
OGS30N03 N-CHANNEL Power MOSFET
RDS(ON) < 8.5 mmOhm @ VGS=10V, ID=15A
Low capacitance
Low gate charge
Fast switching capability
Avalanche energy specified -
MOSFETs & Power Transistors
OGS40N03A 30V N-Channel MOSFET
30V, 40A
RDS(ON) < 8.5mmOhm @ VGS = 10V
RDS(ON) < 14mmOhm @ VGS = 4.5V
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired OGS N-channel Enhancement Mode… -
MOSFETs & Power Transistors
OGS40N08R 80V N-Channel MOSFET
Load Switch
PWM Application
Power Management -
MOSFETs & Power Transistors
OGS6080 68V N-channel MOSFET
Extremely Low RDS(on): Typ.RDS(on) = 7.0m°) @VGS=10 V,Id=40 A
Low gate charge ( typical 75 nC)
Fast switching
100% avalanche tested -
MOSFETs & Power Transistors
OGS60N030 N-Channel Trench Power
VDS =30V,ID =60A
RDS(ON)=4.0mmOhm (typical) @ VGS=10V
RDS(ON)=5.8mmOhm (typical) @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
ESD protection : HBM Class 2 -
MOSFETs & Power Transistors
OGS60N10C N-CHANNEL Power MOSFET
Low RDS(ON) & FOM
Extremely low switching loss
Excellent reliability and uniformity
Fast switching and soft recovery -
MOSFETs & Power Transistors
OGS60N10F 100V N-Channel MOSFET
Fast Switching
Low Gate Charge and RDS(ON)
Low Reverse transfer capacitances