MOSFETs & Power Transistors

Low Intrinsic Capacitances
Excellent Switching Characteristics
Extended Safe Operating Area
Unrivalled Gate Charge : Qg= 40nC (Typ.)
BVDSS=40V, ID=70A
RDS(on) : 4.5mmOhm (Typ) @VGS=10V
100% Avalanche Tested

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=5nC (Typ.).
BVDSS=500V,ID=1A
RDS(on) : 30 mOhm (Max) @VG=10V
100% Avalanche Tested

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 50nC (Typ.).BVDSS=60V,ID=50A
RDS(on) : 0.02mOhm (Max) @VG=10V
100% Avalanche Tested

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 50nC (Typ.).
VDSS= 60V, ID=30A
RDS(on) : 0.030 mOhm (Max) @VG=10V
100% Avalanche Tested

650V, 28A
RDS(ON) Typ =78mmOhm @ VGS = 10V
Ultra-low on-resistance
Low RDS(ON)
Fast reverse recovery body diode

650V, 25A
RDS(ON) = 180 mmOhm @ VGS = 10V
It has been designed tOlow on-state resistance and high frequency
Fast reverse recovery body diode
Low RDS(ON)
Ultra-low on-resistance

650 V, 15A
RDS(ON) Typ = 250mmOhm @ VGS = 10V
650 V Super Junction Power MOSFET
Designed for low on-state resistance
Superior EAS performance

Ultra-fast body diode
Very low FOM RDS(on) x Qg
Easy tOuse/drive
100% avalanche tested
RoHS compliant Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs, designed according tOthe SJ principle and…